solderable ends d2 d2=d1 0 0.20 0.5 0.1 0.5 0.1 4.9 0.2 2.6 0.15 d1 features m e c h an i c al d at a maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified maximum recurrent peak reverse voltage v rrm v ma x imu m rms v o lt a g e v rws v maximum dc blocking voltage v dc v maximum average forw ord rectif ied current at c t l (see fig.1) (note 2) i (av) a peak f orw ard surge current 8.3ms single half - c sine-w ave superimposed on rated load(jedec c method) i fsm a maximum ins tantaneous forw ard vol tage at v 1.0a(note.1) v f v maximum dc reverse current @t a =25 o c at rated dc blocking voltage(note1) @t a =100 o c r | ja r | jl operating junction and storagetemperature range t stg o c storage temperature range t j o c 0.5 45 15 i r note: 1.pulse test:300 | s pulse width,1%duty cy cle sms120---sms1a0 2. p.c.b.mo un ted wit h 0.55"x0 .55"(14.0x14.0mm 2 )copper pad areas reverse voltage: 20 --- 100 v current: 1.0 a ? built-in strain relief ? case:jedec do-213ab,molded plastic over 1111passi vated chip ? low power loss,high effciency ? plastic package has underwriters laborator 111 flammability classification 94v-0 typical thermal resitance (note2) k /w ? high temperature soldering guaranteed:250 o c/10 1 11 seconds at terminals sms120 SMS130 sms140 sms160 sms190 sms1a0 ? polarity: color band denotes cathode end ? weight: 0.0046 ounces, 0.116 gram ma units 20 30 40 60 90 100 do - 213ab ? low profile package ? for surface mounted applications 14 21 28 42 63 70 20 30 40 60 90 100 ? terminals:solder p lated, solderable per mil-std-750, 1111method 2026 ? high current capability,low forward voltage drop 30 1.0 ? for use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ? guardring for overvoltage protection galaxy electrical -55--- +150 -55--- +150 0.5 0.7 0.79 5.0 ? metal silicon junction, majority carrier conduction ? high surge capability www.galaxycn.com bl document number 0281050 bl galaxy electrical 1. dimensions in millimeters barrier rectifiers surface mount schottky
.01 0 0.1 1.0 10 100 80 60 40 20 100 t j =25 t j =100 0 10 30 1 1 0 10 0 15 5 8.3ms single half si ne-wave 50 25 20 5 40 . 2 . 3 .4 .5 .6 .7 .8 .9 0.01 1 .0 10 sms120 sms160 sms190 0 .2 .4 .6 .8 0 25 50 75 single phase half wave 60h z resistive or inductive load 1.0 100 125 150 175 bl galaxy electrical document number 0281050 2. www.galaxycn.com average forward rectified current,amperes peak forward surge current,amperes instantaneous forward current,amperes instant aneous reverse current,microamperes number of cycles at 60hz instantaneous forward voltage,volts percent of rated peak reverse voltage,? lead temperature ?? ratings and characteristic curves sms120---sms1a0 fig.3 -- typical forward characteristics fig.4 -- typical reverse characteristics fig. 1 -- forward derating curve fig. 2-- peak forward surge current -sms1a0 -sms140 0.1
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